USE OF A SCHOTTKY-BARRIER TO MEASURE IMPACT IONIZATION COEFFICIENTS IN SEMICONDUCTORS
USE OF A SCHOTTKY-BARRIER TO MEASURE IMPACT IONIZATION COEFFICIENTS IN SEMICONDUCTORS
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DOI:
10.1016/0038-1101(73)90013-0
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发表时间:
1973-01-01
影响因子:
1.7
通讯作者:
LAMPERT, MA
中科院分区:
文献类型:
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作者:
WOODS, MH;JOHNSON, WC;LAMPERT, MA