Gate modulation of spin precession in a semiconductor channel
Gate modulation of spin precession in a semiconductor channel
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半导体通道中自旋进动的栅极调制
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
Mark Johnson
中科院分区：
文献类型：
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作者：
H. Koo;J. Kwon;J. Eom;Joonyeon Chang;S. Han;Mark Johnson
自旋进动的栅极控制在带有铁磁自旋注入器和检测器的 InAs 量子阱中进行了实验。栅极电场调节自旋轨道相互作用和自旋进动。因此，InAs 沟道中的自旋相关电导由栅极电压控制。使用弹道自旋输运理论，栅极调制结果被证明与 Rashba 场强的栅极电压依赖性非常吻合。
Gate control of spin precession is experimentally presented in an InAs quantum well with ferromagnetic spin injector and detector. The gate electric field modulates the spin–orbit interaction and spin precession. As a consequence, spin dependent conductance in the InAs channel is controlled by the gate voltage. Using ballistic spin transport theory, gate modulation results are proved to fit very well with gate voltage dependence of Rashba field strength.