Patterning of organic devices by interlayer lithography
Patterning of organic devices by interlayer lithography
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DOI：
10.1039/b614171d
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发表时间：
2007-01-01
影响因子：
--
通讯作者：
Bradley, D. D. C.
中科院分区：
文献类型：
--
作者：
Huang, J.;Xia, R.;Bradley, D. D. C.
我们报告了一种新的光刻程序，使收到的半导体聚合物和小分子在近微米级的图案化，而不会造成明显的图案化材料的退化。该方法涉及最少的处理步骤，不需要对有源层进行修改，并且与刚性和柔性基板都兼容。该技术利用在衬底和有源层之间（即在有源层下面）的中间抗蚀剂层，并且涉及在单个曝光/显影步骤中同时图案化抗蚀剂层和有源层。该技术已成功应用于柔性ITO无发光二极管和光电二极管的制造，产生的峰值量子效率分别为8.8 cd A（-1）和57%，与ITO涂层玻璃上制造的类似器件相当。它也容易扩展到在单个衬底上图案化结合不同组成材料的多个器件，例如彩色显示器的红色、绿色和蓝色像素。
We report a new lithographic procedure that enables the patterning of as-received semiconducting polymers and small molecules at the near micron level without causing discernible degradation of the patterned material. The method involves a minimum of processing steps, requires no modification of the active layer, and is compatible with both rigid and flexible substrates. The technique makes use of an intermediate resist layer between the substrate and the active layer, i.e. underneath the active layer, and involves the simultaneous patterning of the resist and active layers in a single expose/develop step. The technique has been successfully applied to the fabrication of flexible ITO-free light-emitting diodes and photodiodes, yielding peak quantum efficiencies of 8.8 cd A(-1) and 57% respectively comparable to similar devices fabricated on ITO-coated glass. It is also readily extendible to the patterning on a single substrate of multiple devices incorporating different component materials, e.g. the red, green and blue pixels of a colour display.