Modelling, Design, and Performance Comparison of Triple Gate Cylindrical and Partially Cylindrical FinFETs for Low-Power Applications
Modelling, Design, and Performance Comparison of Triple Gate Cylindrical and Partially Cylindrical FinFETs for Low-Power Applications
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适用于低功耗应用的三栅极圆柱形和部分圆柱形 FinFET 的建模、设计和性能比较
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发表时间：
2012
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通讯作者：
Sudarshan Tiwari
中科院分区：
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作者：
Sanjeev Rai;Jyotsna Sahu;Wanjul Dattatray;R. Mishra;Sudarshan Tiwari
就技术的发展而言，finfet最近已经成为工程师们的聚焦点。本文作者成功地比较了30nm传统三栅极（Conv） FinFET结构与部分圆柱形（PC） FinFET结构的性能。在PC-FinFET中，翅片分为两个区域。区域I部分为圆柱形，曲率为鳍宽的一半，而区域II类似于传统的FinFET（具有平坦区域）。结果表明，离子效应、Ioff效应以及随后的短通道效应（即阈下斜率、DIBL、自热效应等）的抑制均有较大改善。与C-FinFET相比，PC-FinFET的串联电阻也得到了改善。值得注意的是，在PC-FinFET中，翅片的角是圆形的，从而减少了侧壁面积，从而进一步减少了栅极电容，从而减少了固有延迟。利用C-FinFET和PC-FinFET对CMOS逆变器进行了直流和瞬态分析，结果表明PC-FinFET逆变器比C-FinFET具有更小的传播延迟。
The FinFETs recently have been the rallying point for the engineers as far as the development of the technology is concerned. The authors here have tried successfully to compare the performance of 30 nm conventional triple gate (Conv) FinFET structure with that of partially cylindrical (PC) FinFET. In PC-FinFET the fin is divided into two regions. Region I is partially cylindrical and has curvature of half of the fin width, and Region II is like a conventional FinFET (having flat region). The results show that there is considerable improvement in Ion, Ioff, and subsequent suppression of short channel effects, that is, subthreshold slope, DIBL, self heating effect, and so forth. The improvement has also been felt in series resistance in PC-FinFET as compared to C-FinFET. It is noteworthy also to mention that in PC-FinFET the corner of fin is rounded thus reducing the side wall area which further reduces the gate capacitance reducing the intrinsic delay. The DC and transient analysis of CMOS inverter using C-FinFET and PC-FinFET have been done which shows that PC-FinFET inverter has reduced propagation delay as compared to C-FinFET.