Performance improvement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters
Performance improvement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters
复制标题
通过增强电迁移银纳米团簇附近的局部电场实现电阻开关存储器的性能改进
DOI：
10.1039/c3nr33692a
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发表时间：
2013-01-01
期刊：
影响因子：
6.7
通讯作者：
Liu, Y. C.
中科院分区：
文献类型：
--
作者：
Wang, Z. Q.;Xu, H. Y.;Liu, Y. C.
通过引入Ag纳米团簇（NC），ZnO基阻变存储器件提供了改进的性能，包括改进的开关参数均匀性，以及具有优异可靠性的提高的开关速度。这些Ag NC在最初的几个开关循环中通过电迁移过程在顶部电极（阴极）和开关层之间形成。由于Ag纳米粒子表面的高曲率，其周围的电场可以被增强。增强的局域电场（LEF）导致（1）开关位置在Ag纳米颗粒附近的局部化，其中基于氧空位的导电丝具有简单的结构，并且倾向于沿着LEF方向连接Ag纳米颗粒;（2）氧离子和氧空位的迁移和复合速率增加。这些因素是器械性能改善的原因。
By introducing Ag nanoclusters (NCs), ZnO-based resistive switching memory devices offer improved performance, including improved uniformity of switching parameters, and increased switching speed with excellent reliability. These Ag NCs are formed between the top-electrode (cathode) and the switching layer by an electromigration process in the initial several switching cycles. The electric field can be enhanced around Ag NCs due to their high surface curvature. The enhanced local-electric-field (LEF) results in (1) the localization of the switching site near Ag NCs, where oxygen-vacancy-based conducting filaments have a simple structure, and tend to connect Ag NCs along the LEF direction; (2) an increase in migration and recombination rates of oxygen ions and oxygen vacancies. These factors are responsible for the improvement in device performance.