Effect of composite collector design on the breakdown behavior of InGaP/GaAs double heterojunction bipolar transistor
Effect of composite collector design on the breakdown behavior of InGaP/GaAs double heterojunction bipolar transistor
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复合集电极设计对InGaP/GaAs双异质结双极晶体管击穿行为的影响
DOI：
10.1063/1.1521513
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
S. Yoon
中科院分区：
文献类型：
--
作者：
K. L. Lew;S. Yoon
本文通过一系列的实验和计算，研究了不同的复合集电极设计对InGaP/GaAs/InGaP双异质结双极晶体管击穿特性的影响。未校正和死空间校正模型进行了比较，发现死空间效应是占主导地位的集电体厚度小于300 nm。然而，对于大于500 nm的集电极厚度，这种影响可以忽略。系统地讨论了轻掺杂GaAs（n−-GaAs）和重掺杂InGaP（N+-InGaP）间隔层的作用，以建立设计复合集电极结构的标准。实验和理论结果表明，有必要将n−-GaAs和N+-InGaP间隔层厚度之和保持在50 nm以下，以避免器件击穿特性的显著劣化。
A series of experiments and calculations has been carried out to study the effect of different composite collector designs on InGaP/GaAs/InGaP double heterojunction bipolar transistor breakdown characteristics. A comparison between uncorrected and dead-space corrected models was carried out, and it was found that the dead-space effect is dominant for collector thickness below 300 nm. However, this effect can be neglected for collector thickness larger than 500 nm. The role of lightly doped GaAs (n−-GaAs) and heavily doped InGaP (N+-InGaP) spacer layers is discussed systematically to establish a criterion for designing the composite collector structure. The experimental and theoretical results show that it is necessary to keep the sum of n−-GaAs and N+-InGaP spacer layer thickness below 50 nm to avoid significant degradation of the device breakdown characteristics.