Quantum sensing and imaging with spin defects in hexagonal boron nitride

Quantum sensing and imaging with spin defects in hexagonal boron nitride
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DOI:
10.1080/23746149.2023.2206049
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发表时间:
2023-02
期刊:
Advances in Physics: X
影响因子:
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通讯作者:
Sumukh Vaidya;Xingyu Gao;S. Dikshit;I. Aharonovich;Tongcang Li
Sumukh Vaidya;Xingyu Gao;S. Dikshit;I. Aharonovich;Tongcang Li
中科院分区:
其他
文献类型:
--
作者:
Sumukh Vaidya;Xingyu Gao;S. Dikshit;I. Aharonovich;Tongcang Li

文献摘要

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摘要六方氮化硼(hBN)色心是最近出现的一个新的量子应用浪潮的有希望的候选者。由于hBN的高稳定性和二维(2D)分层结构,hBN中的色心可以很容易地集成到芯片上的纳米光子和等离子体结构中。更重要的是,最近在hBN中发现的光学可寻址自旋缺陷为量子传感应用提供了光子和电子自旋之间的量子界面。研究最充分的hBN自旋缺陷,带负电荷的硼空位()自旋缺陷,已被用于静态磁场,磁噪声,温度,应变,核自旋,液体中的顺磁自旋,RF信号等的量子传感。特别地,具有自旋缺陷的hBN纳米片可以与其他2D材料形成货车德瓦尔斯(vdW)异质结构,用于原位量子感测和成像。这篇综述总结了快速发展的量子传感领域与自旋缺陷的hBN。我们介绍了hBN自旋缺陷的基本性质,量子传感协议,和最近的实验演示的量子传感和成像与hBN自旋缺陷。我们还讨论了提高其灵敏度的方法。最后,我们展望了hBN自旋缺陷的一些潜在的发展和应用。图形摘要
ABSTRACT Color centers in hexagonal boron nitride (hBN) have recently emerged as promising candidates for a new wave of quantum applications. Thanks to hBN’s high stability and two-dimensional (2D) layered structure, color centers in hBN can be readily integrated into nanophotonic and plasmonic structures on a chip. More importantly, the recently discovered optically addressable spin defects in hBN provide a quantum interface between photons and electron spins for quantum sensing applications. The most well-studied hBN spin defects, the negatively charged boron vacancy ( ) spin defects, have been used for quantum sensing of static magnetic fields, magnetic noise, temperature, strain, nuclear spins, paramagnetic spins in liquids, RF signals, and beyond. In particular, hBN nanosheets with spin defects can form van der Waals (vdW) heterostructures with other 2D materials for in situ quantum sensing and imaging. This review summarizes the rapidly evolving field of quantum sensing with spin defects in hBN. We introduce basic properties of hBN spin defects, quantum sensing protocols, and recent experimental demonstrations of quantum sensing and imaging with hBN spin defects. We also discuss methods to enhance their sensitivity. Finally, we envision some potential developments and applications of hBN spin defects. GRAPHICAL ABSTRACT