A photoresponsive single electron transistor prepared from oligothiophene molecules and gold nanoparticles in a nanogap electrode
A photoresponsive single electron transistor prepared from oligothiophene molecules and gold nanoparticles in a nanogap electrode
复制标题
DOI：
10.1063/1.3359424
复制
发表时间：
2010-03-08
影响因子：
4
通讯作者：
Matsuda, Kenji
中科院分区：
文献类型：
--
作者：
Yamaguchi, Hidehiro;Terui, Toshifumi;Matsuda, Kenji
在纳米间隙电极中制备了金纳米颗粒-噻吩五聚物网络，并测量了其光响应和导电性能。在低温下，器件的微分电导图中出现了库仑金刚石，表明器件作为单电子晶体管工作。在紫外光照射下，电流显示出不连续的变化。辐照前后的I-V-SD曲线和微分电导图表明，电流的突变可以用库仑岛电位的移动来解释。(C)2010年美国物理学会。[doi：10.1063/1.3359424]
Gold nanoparticle-oligothiophene pentamer networks were prepared in a nanogap electrode and their photoresponsive and conductive properties were measured. Coulomb diamond appeared in the differential conductance map of the device at cryogenic temperatures, indicating that the device worked as a single electron transistor. Upon irradiation with UV light, the current showed discontinuous changes. The I-V-SD curve and differential conductance mapping before and after irradiation showed that the abrupt changes in current can be explained by a shift in the potential of the Coulomb island. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3359424]