Three hydrogenated amorphous silicon photodiodes stacked for an above integrated circuit colour sensor
Three hydrogenated amorphous silicon photodiodes stacked for an above integrated circuit colour sensor
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三个氢化非晶硅光电二极管堆叠用于上述集成电路颜色传感器
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
L. Poupinet
中科院分区：
文献类型：
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作者：
P. Gidon;B. Giffard;N. Moussy;P. Parrein;L. Poupinet
本文给出了一种新的彩色像素结构的理论模拟和实验结果。这个像素在透明电极之间的三个堆叠的非晶硅光电二极管中捕获光。为了进行信号优化，对光学结构进行了仿真。选择每个堆叠层的厚度是为了吸收最大的光，并且三个信号允许以最小的误差和噪声线性计算CIE颜色坐标1。整个过程与上述集成电路（IC）方法兼容。每个光电二极管都是n‐i‐p结构。出于光学原因，上二极管的厚度必须控制在25nm以下。第一个测试像素结构可以很好地恢复颜色坐标。每个光电二极管的吸收光谱测量值与模拟值吻合较好。在标准拜耳模式下，这种具有三个光电二极管每像素的特定堆栈的信号总量是上述IC像素的两倍。
We present theoretical simulation and experimental results of a new colour pixel structure. This pixel catches the light in three stacked amorphous silicon photodiodes encompassed between transparent electrodes. The optical structure has been simulated for signal optimisation. The thickness of each stacked layer is chosen in order to absorb the maximum of light and the three signals allow to linearly calculate the CIE colour coordinates 1 with minimum error and noise. The whole process is compatible with an above integrated circuit (IC) approach. Each photodiode is an n‐i‐p structure. For optical reason, the upper diode must be controlled down to 25 nm thickness. The first test pixel structure allows a good recovering of colour coordinates. The measured absorption spectrum of each photodiode is in good agreement with our simulations. This specific stack with three photodiodes per pixel totalises two times more signal than an above IC pixel under a standard Bayer pattern 2,3 .