Doping effect and fluorescence quenching mechanism of N-doped graphene quantum dots in the detection of dopamine
Doping effect and fluorescence quenching mechanism of N-doped graphene quantum dots in the detection of dopamine
复制标题
N掺杂石墨烯量子点在多巴胺检测中的掺杂效应及荧光猝灭机制
DOI:
10.1016/j.talanta.2019.01.001
复制
发表时间:
2019-05-01
期刊:
影响因子:
6.1
通讯作者:
Li, Y.
中科院分区:
文献类型:
--
作者:
Ma, Y.;Chen, A. Y.;Li, Y.
Element doping is recognized as a powerful way to modify surface defect structure and further enhance the fluorescence performance of graphene quantum dots (GQDs). N-doped, S-doped and S, N co-doped GQDs were synthesized to explore the influence of element doping on fluorescence sensing of dopamine (DA) biomolecules. Two interesting works are found, one is that the N-doped GQDs with urea as N source are more effective than the S-doped and S,N co-doped GQDs, characterized by the higher quantum yield (QY) up to 78% and sensitive fluorescence quenching performance to DA. The other is that the N-doped GQDs with ethylenediamine as N source have the highest QY up to 95%, however, exhibits no quenching performance to DA. This abnormal observation is discussed based on the microstructure analysis. Under the optimal reaction condition, the N-doped GQDs exhibit a dual linear relationship of quenching intensity with DA concentration in the range of 10-3000 nM and 3000-7000 nM with detection limits of 3.3 and 611 nM, respectively. The quenching mechanism of N-doped GQDs toward DA is explored from the view of N chemical states, biomolecule structure of DA homologues and redox reaction of DA.