Giant-Lateral-Growth of SiGe Stripes on Insulating-Substrate by Self-Organized-Seeding and Rapid-Melting-Growth in Solid-Liquid Coexisting Region
Giant-Lateral-Growth of SiGe Stripes on Insulating-Substrate by Self-Organized-Seeding and Rapid-Melting-Growth in Solid-Liquid Coexisting Region
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DOI：
10.1149/2.003405ssl
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发表时间：
2014
影响因子：
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通讯作者：
R. Matsumura;Ryusuke Kato;Y. Tojo;M. Kurosawa;T. Sadoh;M. Miyao
中科院分区：
文献类型：
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作者：
R. Matsumura;Ryusuke Kato;Y. Tojo;M. Kurosawa;T. Sadoh;M. Miyao
在绝缘衬底上形成具有大晶粒的SiGe晶体是实现高速薄膜晶体管（TFT）所期望的。本文研究了在固液共存温区，a-Si 0.15Ge 0.85条（2-15 μ m条宽）在绝缘体上的快速热退火（950-1100 ℃）。在退火过程中形成的富硅微晶核心是清楚地证明，其中硅浓度和面密度的微晶是唯一由退火温度决定。这种自组织引晶能够在冷却期间从微晶横向快速熔化生长。单位长度上的微晶密度与条纹宽度成正比，导致横向生长长度随条纹宽度的减小而增大。因此，在1050 ℃下，对于2 μm的窄条宽度，实现了SiGe晶粒（长度为~ 300 μ m，Si浓度为0-40%）的横向巨生长。该技术有助于高级TFT用于高性能系统级显示器。
Formation of SiGe crystals with large-grain on insulating-substrates is desired to achieve high-speed thin-film-transistors (TFT). We examine rapid-thermal annealing (950–1100 C) of a-Si 0.15 Ge 0.85-stripe (2–15-μm-stripe-width) on insulator structures in solid-liquid-coexisting temperature-region. Formation of Si-rich micro-crystal-nuclei during annealing is clearly evidenced, where Si concentration and areal-density of micro-crystals are uniquely determined by annealing-temperature. Such self-organized-seeding enables lateral rapid-melting-growth from micro-crystals during cooling. The micro-crystals density per-unit-length is proportional to stripe-width, which results in enlargement of lateral-growth-length by narrowing stripe-width. Consequently, giant-lateral-growth of SiGe grains (∼ 300-μm-length, 0–40%-Si-concentration) are achieved for narrow-stripe-width of 2 μm at 1050 C. This technique facilitates advanced TFT for high-performance system-in-displays.