Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade-猫眼课题宝

DOI：

10.1016/j.nima.2016.05.092

发表时间：

2016-09

期刊：

Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment

影响因子：

1.4

通讯作者：

中科院分区：

物理与天体物理3区

文献类型：

作者：

V. Fadeyev;Z. Galloway;H. Grabas;A. Grillo;Zhijun Liang;F. Martinez-McKinney;A. Seiden;J. Volk;A. Affolder;M. Buckland;L. Meng;K. Arndt;D. Bortoletto;T. Huffman;J. John;S. McMahon;R. Nickerson;P. Phillips;R. Plackett;I. Shipsey;L. Vigani;R. Bates;A. Blue;C. Buttar;K. Kanisauskas;D. Maneuski;M. Benoit;F. D. Bello;P. Caragiulo;A. Dragone;P. Grenier;C. Kenney;F. Rubbo;J. Segal;D. Su;C. Tamma;D. Das;J. Dopke;R. Turchetta;F. Wilson;S. Worm;F. Ehrler;I. Perić;I. Gregor;M. Stanitzki;M. Hoeferkamp;S. Seidel;L. Hommels;G. Kramberger;I. Mandić;M. Mikuž;D. Muenstermann;Rui Wang;J. Zhang;M. Warren;W. Song;Q. Xiu;Hongbo Zhu

ATLAS已经形成了条CMOS项目，研究使用CMOS MAPS设备作为硅条传感器的第二阶段条跟踪器升级。这种传感器的选择比传统的基线设计有几个优点，例如更好的分辨率，跟踪体积中的材料更少，以及更快的建造速度。同时，传感器的许多设计特征是由最小化对检测器其余部分的影响的要求驱动的。因此，目标设备具有长像素，这些长像素被分组以形成具有二进制编码zposition的虚拟条带。关键性能方面是与HL-LHC环境的辐射硬度兼容性，以及利用全掩模版读出架构提取全命中位置。到目前为止，已经提交了几个测试芯片使用两种不同的CMOS技术。AMS 350 nm采用高压CMOS工艺（HV-CMOS），传感器偏压高达120 V。TowerJazz 180 nm高电阻率CMOS工艺（HR-CMOS）使用高电阻率外延层在衬底顶部提供耗尽区。我们已经评估了被动像素性能和电荷收集预测。这些结果有力地支持了这些设备的辐射耐受性的辐射剂量的HL-LHC在带跟踪器区域。我们还描述了下一个芯片提交的设计功能，我们的技术评估的动机。

ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encodedzposition. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350 nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120 V. The TowerJazz 180 nm high resistivity CMOS process (HR-CMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation.

Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade

文献摘要

被引文献

相似文献