Block Copolymer Self-Assembly-Directed Single-Crystal Homo- and Heteroepitaxial Nanostructures
Block Copolymer Self-Assembly-Directed Single-Crystal Homo- and Heteroepitaxial Nanostructures
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DOI：
10.1126/science.1193369
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发表时间：
2010-10-08
期刊：
影响因子：
56.9
通讯作者：
Wiesner, Ulrich
中科院分区：
文献类型：
--
作者：
Arora, Hitesh;Du, Phong;Wiesner, Ulrich
外延生长是一种广泛使用的高质量晶体生长方法。无机固体领域的关键挑战之一是外延单晶纳米结构的发展。我们描述了它们的形成从嵌段共聚物自组装定向纳米多孔模板上的单晶Si回填Si或NiSi通过激光诱导的瞬态熔融过程。根据厚度，模板去除留下纳米柱阵列或多孔纳米结构。对于化学计量的NiSi沉积，模板孔提供限制，使得异质外延生长成为可能。通过掩模的照射提供了对分层结构材料的访问。可蚀刻和不可蚀刻材料的这些结果表明，生长外延单晶纳米结构薄膜的基础研究和各种各样的应用，包括能量转换和存储的一般策略。
Epitaxy is a widely used method to grow high-quality crystals. One of the key challenges in the field of inorganic solids is the development of epitaxial single-crystal nanostructures. We describe their formation from block copolymer self-assembly-directed nanoporous templates on single-crystal Si backfilled with Si or NiSi through a laser-induced transient melt process. Depending on thickness, template removal leaves either an array of nanopillars or porous nanostructures behind. For stoichiometric NiSi deposition, the template pores provide confinement, enabling heteroepitaxial growth. Irradiation through a mask provides access to hierarchically structured materials. These results on etchable and non-etchable materials suggest a general strategy for growing epitaxial single-crystal nanostructured thin films for fundamental studies and a wide variety of applications, including energy conversion and storage.