Experimental evidence for dissipationless transport of the chiral edge state of the high-field Chern insulator in MnBi2Te4 nanodevices
Experimental evidence for dissipationless transport of the chiral edge state of the high-field Chern insulator in MnBi2Te4 nanodevices
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MnBi2Te4 纳米器件中高场陈绝缘体手性边缘态无耗散输运的实验证据
DOI：
10.1103/physrevb.105.085412
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发表时间：
2022
影响因子：
3.7
通讯作者：
Fengqi Song
中科院分区：
文献类型：
--
作者：
Zhe Ying;Shuai Zhang;Bo Chen;Bin Jia;Fucong Fei;Minhao Zhang;Haijun Zhang;Xuefeng Wang;Fengqi Song
我们证明了手性边缘态（CES）在量子反常霍尔绝缘体候选MnBi2Te4纳米器件中的无耗散输运。该器件呈现出接近零的纵向电阻以及超过0.97 h/e的量子化霍尔平台，温度范围从极低到22k。四探头非局部测量的每一个电阻都接近于零，两探头测量的平台值为+1 h/e，而三探头非局部测量的结果依赖于磁场。这表明了边缘态的非耗散性和手性。在6 K以下表现出良好的无耗散输运，在22 K以上增加温度的同时变程跳变，以及热活化的三种温度依赖机制。即使在最低温度下，超过1.4a的电流也会破坏无耗散输运。这些形成了MnBi2Te4体系中陈氏绝缘子状态的一整套完整证据。
We demonstrate the dissipationless transport of the chiral edge state (CES) in the nanodevices of quantum anomalous Hall insulator candidate MnBi2Te4. The device presents a near-zero longitudinal resistance together with a quantized Hall plateau in excess of 0.97 h/e over a range of temperatures from very low up to the Néel temperature of 22 K. Each of four-probe nonlocal measurements gives near-zero resistance and two-probe measurements exhibit a plateau of +1 h/e, while the results of three-probe nonlocal measurements depend on the magnetic field. This indicates non-dissipation as well as the chirality of the edge state. The CES shows three regimes of temperature dependence, i.e., well-preserved dissipationless transport below 6 K, variable range hopping while increasing the temperature and thermal activation at higher than 22 K. Even at the lowest temperature, a current of over 1.4 A breaks the dissipationless transport. These form a complete set of evidences of the Chern insulator state in the MnBi2Te4 systems.