A catalyst free method to grow GaN nanowires on porous Si at low temperature
A catalyst free method to grow GaN nanowires on porous Si at low temperature
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DOI：
10.1016/j.ceramint.2015.06.111
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发表时间：
2015-12
影响因子：
5.2
通讯作者：
M. Gholampour;A. Abdollah-zadeh;L. Shekari;R. Poursalehi
中科院分区：
文献类型：
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作者：
M. Gholampour;A. Abdollah-zadeh;L. Shekari;R. Poursalehi
采用脉冲直流等离子体增强化学气相沉积（DC-PECVD）方法，在600 °C下，以多孔硅（PSi）为衬底，制备了GaN纳米线。前体是镓（Ga）金属和氮（N）等离子体。GaN纳米线的生长是由于Ga原子和激发的N原子在等离子体环境中在PSi衬底上的直接反应，而不使用任何催化剂。在PSi衬底上生长GaN纳米线的机制是自诱导机制。采用场发射扫描电子显微镜（FE-SEM）、透射电子显微镜（TEM）、X射线衍射（XRD）、能量色散X射线能谱（EDS）、光致发光（PL）和拉曼光谱对GaN纳米线进行了表征。这些测量结果表明，GaN纳米线的直径从20到50 nm的六方结构的合成。GaN纳米线的带隙能量约为3.42 eV。使用拉曼光谱的进一步光学分析显示，分别由于A1（TO）和A1（LO），在535 cm-1和730 cm-1处存在两个拉曼活性光学声子。
GaN nanowires (NWs) were synthesized on porous silicon (PSi) as a substrate using pulsed direct current plasma enhanced chemical vapor deposition (DC-PECVD) method at 600 °C. The precursors were gallium (Ga) metal and nitrogen (N) plasma. The GaN NWs were grown as a result of direct reaction between Ga atoms and excited N atoms in the plasma environment on PSi substrate, without using any catalyst. Self-induced mechanism is suggested to grow GaN NWs on PSi. Characterizations of GaN NWs were carried out by field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDS), photoluminescence (PL) and Raman spectroscopy. These measurements showed that the hexagonal structure of GaN NWs were synthesized with diameters from 20 to 50 nm. The band gap energy of GaN NWs was obtained about 3.42 eV. Further optical analysis using Raman spectra displayed two Raman active optical phonons at 535 cm−1and 730 cm−1due to A1(TO) and A1(LO), respectively.