Rapid three-dimensional imaging of defect distributions using a high-intensity positron microbeam
Rapid three-dimensional imaging of defect distributions using a high-intensity positron microbeam
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DOI：
10.1063/1.3137188
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发表时间：
2009-05
影响因子：
4
通讯作者：
N. Oshima;R. Suzuki;T. Ohdaira;A. Kinomura;T. Narumi;A. Uedono;M. Fujinami
中科院分区：
文献类型：
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作者：
N. Oshima;R. Suzuki;T. Ohdaira;A. Kinomura;T. Narumi;A. Uedono;M. Fujinami
利用电子加速器产生的强流正电子微束，对样品中的缺陷分布进行了三维正电子寿命图的测量。样品处的光束直径为80-100 μm。用于测量正电子寿命的正电子湮没γ射线的计数率高达3×103 s-1。正电子寿命在二氧化硅样品，这是通过一个网状掩模用离子束照射的三维成像证明。获得单个图像（2.5×3.5 mm 2面积为3500像素）的时间为0.5-1 h。
An intense positron microbeam generated by an electron accelerator has been developed for obtaining three-dimensional positron lifetime mappings in a sample to permit visual evaluation of defect distributions. The beam diameter at the sample was 80–100 μm. The counting rate of the positron annihilation γ rays used to measure positron lifetime was as large as 3×103 s−1. Three-dimensional imaging was demonstrated of positron lifetimes in a SiO2 sample, which was irradiated with ion beams through a mesh mask. The time to obtain a single image (3500 pixels for an area of 2.5×3.5 mm2) was 0.5–1 h.