Vacancy compensation and related donor-acceptor pair recombination in bulk AlN
Vacancy compensation and related donor-acceptor pair recombination in bulk AlN
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DOI：
10.1063/1.4824731
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发表时间：
2013-10-14
影响因子：
4
通讯作者：
Irving, Douglas L.
中科院分区：
文献类型：
--
作者：
Gaddy, Benjamin E.;Bryan, Zachary;Irving, Douglas L.
一个突出的2.8 eV的发射峰被确定在体AlN衬底生长的物理气相传输。该峰被示出与样品中的碳浓度有关。密度泛函理论计算预测，这种发射是由氮位点上的取代碳和氮空位之间的供体-受体对（DAP）复合引起的。光致发光和光致发光-激发光谱被用来证实该模型，并指出发射的DAP特征。缺陷之间的相互作用提供了一种途径，以创造紫外透明的AlN基板的光电子应用。(C)2013 AIP Publishing LLC.
A prominent 2.8 eV emission peak is identified in bulk AlN substrates grown by physical vapor transport. This peak is shown to be related to the carbon concentration in the samples. Density functional theory calculations predict that this emission is caused by a donor-acceptor pair (DAP) recombination between substitutional carbon on the nitrogen site and a nitrogen vacancy. Photoluminescence and photoluminescence-excitation spectroscopy are used to confirm the model and indicate the DAP character of the emission. The interaction between defects provides a pathway to creating ultraviolet-transparent AlN substrates for optoelectronics applications. (C) 2013 AIP Publishing LLC.