A new backscattering model giving a description of the quasi-ballistic transport in nano-MOSFET
A new backscattering model giving a description of the quasi-ballistic transport in nano-MOSFET
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DOI：
10.1109/ted.2005.856181
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发表时间：
2005-09
影响因子：
3.1
通讯作者：
E. Fuchs;P. Dollfus;G. Le Carval;S. Barraud;D. Villanueva;F. Salvetti;H. Jaouen;T. Skotnicki
中科院分区：
文献类型：
--
作者：
E. Fuchs;P. Dollfus;G. Le Carval;S. Barraud;D. Villanueva;F. Salvetti;H. Jaouen;T. Skotnicki
A backscattering model suitable for compact modeling of nanoscale MOSFET is developed within the Landauer flux-scattering theory. To describe the quasi-ballistic transport, a new backscattering model based on the accurate determination of ballistic and backscattering probabilities along the channel is developed. This model is based on a careful analysis of transport in device using Monte Carlo simulation. This model allows us to display the main physical quantities along the channel and to accurately describe the quasi-ballistic transport and its effects on current-voltage characteristics.
