In Situ Axially Doped n-Channel Silicon Nanowire Field-Effect Transistors
In Situ Axially Doped n-Channel Silicon Nanowire Field-Effect Transistors
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DOI：
10.1021/nl8022059
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发表时间：
2008-12-01
期刊：
影响因子：
10.8
通讯作者：
Mayer, Theresa S.
中科院分区：
文献类型：
--
作者：
Ho, Tsung-ta;Wang, Yanfeng;Mayer, Theresa S.
采用气-液-固技术，在硅烷源气体的生长过程中，通过顺序调节进口气流中磷化氢的引入，合成了轴向掺杂(n(+)-p（-)-n(+)）硅纳米线。在硅纳米线热氧化后制备的顶栅和绕栅金属氧化物半导体场效应晶体管通过p（-）体段的电子反转来工作，并且比均匀掺杂p（-）的纳米线场效应器件具有更高的导通状态电流和通断状态电流比。使用排除源极和漏极接触电阻的四点顶栅结构估计器件的有效电子迁移率，并发现遵循预期的通用反转层迁移率与有效电场的趋势。绕栅极器件的场效应特性对全局反向偏置不太敏感，因此可以更好地控制纳米线通道的静电。这些结果证明了为未来的平面和垂直纳米电子应用量身定制硅纳米线轴向掺杂轮廓的能力。
Axially doped (n(+)-p(-)-n(+)) silicon nanowires were synthesized using the vapor-liquid-solid technique by sequentially modulating the introduction of phosphine to the inlet gas stream during growth from a silane source gas. Top-gate and wrap-around-gate metal oxide semiconductor field-effect transistors that were fabricated after thermal oxidation of the silicon nanowires operate by electron inversion of the p(-) body segment and have significantly higher on-state current and on-to-off state current ratios than do uniformly p(-)-doped nanowire field-effect devices. The effective electron mobility of the devices was estimated using a four-point top-gate structure that excludes the source and drain contact resistance and was found to follow the expected universal inversion layer mobility versus effective electric field trend. The field-effect properties of wrap-around-gate devices are less sensitive to global-back-gate bias and thus provide better electrostatic control of the nanowire channel. These results demonstrate the ability to tailor the axial doping profile of silicon nanowires for future planar and vertical nanoelectronic applications.