Robust Nanocapacitors Based on Wafer-Scale Single-Crystal Hexagonal Boron Nitride Monolayer Films
Robust Nanocapacitors Based on Wafer-Scale Single-Crystal Hexagonal Boron Nitride Monolayer Films
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DOI：
10.1021/acsanm.1c00298
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发表时间：
2021-06
期刊：
影响因子：
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通讯作者：
Yanwei He;Yuan Li;Miguel Isarraraz;Pedro A. Peña;J. Tran;Long Xu;Hao Tian;Tianchen Yang;P. Wei;C. Ozkan;M. Ozkan;Jianlin Liu
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文献类型：
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作者：
Yanwei He;Yuan Li;Miguel Isarraraz;Pedro A. Peña;J. Tran;Long Xu;Hao Tian;Tianchen Yang;P. Wei;C. Ozkan;M. Ozkan;Jianlin Liu
二维晶圆级单晶六方氮化硼 (h-BN) 薄膜被认为是下一代范德华 (vdW) 电子器件的重要组成部分。最近，合成过程取得了进展，从而实现了电子设备的演示。在这项工作中，我们报告了一种合成高质量单晶 h-BN 单层薄膜的有效方法。通过对镍箔进行热退火，然后进行电解抛光以去除钝化的表面层来生产单晶金属基板。采用分子束外延法合成了1 in.2单层h-BN单晶薄膜。我们发现电解抛光在大幅提高 h-BN 薄膜生长速度方面发挥着重要作用。使用生长的单层 h-BN 薄膜制造了坚固的纳米电容器。详细研究了纳米电容效应和隧道电流机制，并引入“有效距离”概念来解释使用原子级薄介电h-BN薄膜的(vdW)金属-绝缘体-金属器件中的量子现象。
Two-dimensional wafer-scale and single-crystal hexagonal boron nitride (h-BN) films are considered a crucial part of the next generation of van der Waals (vdW) electronic devices. Progress has been made in the synthesis process recently, leading to the demonstration of electronic devices. In this work, we report an effective method to synthesize high-quality single-crystal h-BN monolayer films. Single-crystal metal substrates were produced by thermal annealing of Ni foils, followed by electropolishing to remove the passivated surface layer. Molecular beam epitaxy was employed to synthesize 1 in.2monolayer single-crystal h-BN films. We discovered that electropolishing plays an important role in drastically increasing the speed of h-BN film growth. Robust nanocapacitors were fabricated using as-grown monolayer h-BN films. The nanocapacitance effect and tunneling current mechanism were studied in detail, and the “effective distance” concept is introduced to explain the quantum phenomenon in the (vdW) metal–insulator–metal devices using atomically thin dielectric h-BN films.