Fabrication of High‐Voltage Flip Chip Deep Ultraviolet Light‐Emitting Diodes Using an Inclined Sidewalls Structure
Fabrication of High‐Voltage Flip Chip Deep Ultraviolet Light‐Emitting Diodes Using an Inclined Sidewalls Structure
复制标题
DOI：
10.1002/pssa.201900059
复制
发表时间：
2019-06
期刊：
影响因子：
--
通讯作者：
Zhibai Zhong;Xuanli Zheng;Jinchai Li;Jinjian Zheng;Yashu Zang;Wei Lin;Junyong Kang
中科院分区：
文献类型：
--
作者：
Zhibai Zhong;Xuanli Zheng;Jinchai Li;Jinjian Zheng;Yashu Zang;Wei Lin;Junyong Kang
分别采用2 × 2和3 × 3单元结构设计了两种高压倒装芯片深紫外发光二极管（HV-FC DUV-LED），其中每个单元均采用SiO2/Al覆盖的倾斜侧壁结构，模拟结果表明倾斜侧壁结构更有利于提取横向磁偏振光。因此，在1000 mA时，由3 × 3单元构成的HV-FC DUV-LED的光功率高达145.7 mW。
Two types of high‐voltage flip chip deep ultraviolet light emitting diodes (HV‐FC DUV‐LEDs) are constructed with 2 × 2 and 3 × 3 cells, respectively, in which each single cell is fabricated with inclined sidewalls covered by SiO2/Al. The simulation results suggest that the structure with inclined sidewalls is much favorable to extract the transverse magnetic‐polarized lights. As a result, the light power as high as 145.7 mW is achieved in HV‐FC DUV‐LED constructed with 3 × 3 cells at 1000 mA.