Image states at the interface with a dipolar organic semiconductor.
Image states at the interface with a dipolar organic semiconductor.
复制标题
与偶极有机半导体界面处的图像状态。
作者：
Mary P. Steele;M. Blumenfeld;O. Monti
本文研究了偶极有机半导体萘氧钒在高取向热解石墨上亚单层到少单层的象态。一个显着的分子偶极子在有组织的薄膜中的存在下，导致覆盖的图像状态的强烈修改。在0-1 ML制度，我们观察到连续稳定的图像状态，增加覆盖范围。超过1 ML，一个新的图像状态的发展，对应于在有机半导体/基板界面的屏蔽相互作用。我们发现，所观察到的图像状态的演变可以理解的基础上，在强电场的存在下，共振增强的阴离子形成。这些数据代表了一个步骤，了解静电场对有机半导体界面上的电子结构的影响。
Image states of the dipolar organic semiconductor vanadyl naphthalocyanine on highly oriented pyrolytic graphite are investigated in the submonolayer to few monolayer regime. The presence of a significant molecular dipole in the organized thin films leads to a strong modification of the image states with coverage. In the 0-1 ML regime, we observe successive stabilization of the image state with increasing coverage. Above 1 ML, a new image state develops, corresponding to the screened interaction at the organic semiconductor/substrate interface. We show that the evolution of the observed image states can be understood on the basis of resonance-enhanced anion formation in the presence of strong electric fields. These data represent a step toward understanding the influence of electrostatic fields on electronic structure at organic semiconductor interfaces.
影响因子：
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作者：
Yongfeng Wang;J. Kröger;R. Berndt;W. Hofer
通讯作者：
Yongfeng Wang;J. Kröger;R. Berndt;W. Hofer