Design and Application of a High Sensitivity Piezoresistive Pressure Sensor for Low Pressure Conditions.
Design and Application of a High Sensitivity Piezoresistive Pressure Sensor for Low Pressure Conditions.
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DOI：
10.3390/s150922692
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发表时间：
2015-09-08
期刊：
影响因子：
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通讯作者：
Huang J
中科院分区：
文献类型：
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作者：
Yu H;Huang J
本文提出了一种用于低压检测（0.5 kPa-40 kPa）的压力传感器。在一种结构（No.1）中，硅膜被部分蚀刻，在其顶部形成交叉梁，以实现应力集中。铝层也作为梁的一部分沉积。制造了四个压敏电阻。两个位于梁的两端。另外两个位于膜外围。四个压敏电阻连接成惠斯通电桥。为了证明该结构的应力集中效应，设计并制造了另外两个结构。一种是平板膜结构（No.2），另一种是带有铝梁但没有蚀刻硅的结构（No.3）。这三种结构的测量结果表明，1号结构的灵敏度最高，约为2号结构的3.8倍，3号结构的2.7倍。他们还表明，梁中的残余应力对传感器性能有一些背面影响。
In this paper, a pressure sensor for low pressure detection (0.5 kPa–40 kPa) is proposed. In one structure (No. 1), the silicon membrane is partly etched to form a crossed beam on its top for stress concentration. An aluminum layer is also deposited as part of the beam. Four piezoresistors are fabricated. Two are located at the two ends of the beam. The other two are located at the membrane periphery. Four piezoresistors connect into a Wheatstone bridge. To demonstrate the stress concentrate effect of this structure, two other structures were designed and fabricated. One is a flat membrane structure (No. 2), the other is a structure with the aluminum beam, but without etched silicon (No. 3). The measurement results of these three structures show that the No.1 structure has the highest sensitivity, which is about 3.8 times that of the No. 2 structure and 2.7 times that of the No. 3 structure. They also show that the residual stress in the beam has some backside effect on the sensor performance.