Fabrication of an antiferroelectric NaNbO3-CaZrO3 film on a (001)SrTiO3 substrate by pulsed laser deposition
Fabrication of an antiferroelectric NaNbO3-CaZrO3 film on a (001)SrTiO3 substrate by pulsed laser deposition
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DOI：
10.7567/1347-4065/ab36ff
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发表时间：
2019-08
影响因子：
1.5
通讯作者：
Kosuke Beppu;Y. Iida;H. Adachi;I. Fujii;T. Wada
中科院分区：
文献类型：
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作者：
Kosuke Beppu;Y. Iida;H. Adachi;I. Fujii;T. Wada
本研究证明了脉冲激光沉积法在SrRuO3涂层（001）SrTiO3单晶衬底上沉积0.94NaNbO3-0.06CaZrO3薄膜的反铁电性。x射线衍射倒易空间图和电子衍射图表明，0.94NaNbO3-0.06CaZrO3薄膜的晶体结构具有反铁电NaNbO3的四重超晶格结构。0.94NaNbO3-0.06CaZrO3薄膜呈现反铁电双极化电场（P-E）磁滞回线。随着测量温度的升高，P-E响应的滞后性变得明显。此外，0.94NaNbO3-0.06CaZrO3薄膜在160℃高温下表现出反铁电行为。
The present study demonstrates the antiferroelectric property of a 0.94NaNbO3-0.06CaZrO3 thin-film deposited on a SrRuO3 coated (001)SrTiO3 single crystal substrate fabricated by a pulsed laser deposition method. X-ray diffraction reciprocal space mapping and electron diffraction patterns show that the crystal structure of the 0.94NaNbO3-0.06CaZrO3 thin film has a fourfold super lattice structure of antiferroelectric NaNbO3. The 0.94NaNbO3-0.06CaZrO3 thin film shows an antiferroelectric double polarization–electric field (P–E) hysteresis loop. The hysteresis of the P–E response became clear with rising measurement temperature. Furthermore, the 0.94NaNbO3-0.06CaZrO3 thin film exhibits antiferroelectrc behavior at a high temperature of 160 °C.