Spin density wave instability in a ferromagnet.
Spin density wave instability in a ferromagnet.
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DOI：
10.1038/s41598-018-23555-4
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发表时间：
2018-03-27
影响因子：
4.6
通讯作者：
DiTusa JF
中科院分区：
文献类型：
--
作者：
Wu Y;Ning Z;Cao H;Cao G;Benavides KA;Karna S;McCandless GT;Jin R;Chan JY;Shelton WA;DiTusa JF
由于其合作性质，磁有序涉及自旋，电荷和晶格自由度之间的复杂相互作用，这可能导致磁状态之间的强烈竞争。二元Fe3Ga4是一种这样的材料，其表现出具有铁磁（FM）基态、在中间温度下的反铁磁（AFM）行为以及在高温下的FM状态的明显重新进入的竞争顺序。通过中子衍射实验和模拟相结合，我们发现原子力显微镜状态是一个无公度自旋密度波（ISDW）有序嵌套在自旋极化费米面。这两种磁性状态，FM和ISDW，很少在同一种材料中观察到，如果不施加极化磁场。迄今为止，这种不寻常的机制从未被观察到，它的元素起源可能在许多其他磁性系统中产生深远的影响，这些磁性系统包含这些类型的磁序之间的强烈竞争。此外，磁性状态之间的竞争导致对外部扰动的敏感性，从而允许通过温度、磁场、无序和压力来控制Fe3Ga4中的磁性转变。因此，Fe_3Ga_4在新型磁存储器件，如隧道磁阻自旋电子器件的磁性元件中具有潜在的应用前景。
Due to its cooperative nature, magnetic ordering involves a complex interplay between spin, charge, and lattice degrees of freedom, which can lead to strong competition between magnetic states. Binary Fe3Ga4 is one such material that exhibits competing orders having a ferromagnetic (FM) ground state, an antiferromagnetic (AFM) behavior at intermediate temperatures, and a conspicuous re-entrance of the FM state at high temperature. Through a combination of neutron diffraction experiments and simulations, we have discovered that the AFM state is an incommensurate spin-density wave (ISDW) ordering generated by nesting in the spin polarized Fermi surface. These two magnetic states, FM and ISDW, are seldom observed in the same material without application of a polarizing magnetic field. To date, this unusual mechanism has never been observed and its elemental origins could have far reaching implications in many other magnetic systems that contain strong competition between these types of magnetic order. Furthermore, the competition between magnetic states results in a susceptibility to external perturbations allowing the magnetic transitions in Fe3Ga4 to be controlled via temperature, magnetic field, disorder, and pressure. Thus, Fe3Ga4 has potential for application in novel magnetic memory devices, such as the magnetic components of tunneling magnetoresistance spintronics devices.
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影响因子：
16.6
作者：
Chen X;Rosbash M
通讯作者：
Rosbash M
影响因子：
6.1
作者：
Krause L;Herbst-Irmer R;Sheldrick GM;Stalke D
通讯作者：
Stalke D
影响因子：
--
作者：
OVERHAUSER, AW
通讯作者：
OVERHAUSER, AW
影响因子：
3.7
作者：
Bhattacharyya, A.;Khalyavin, D. D.;Hillier, A. D.
通讯作者：
Hillier, A. D.
影响因子：
2.7
作者：
Bud'ko, SL;Islam, Z;Canfield, PC
通讯作者：
Canfield, PC