Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range
Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range
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宽温度范围内非均匀 4H-SiC 肖特基和 JBS 二极管的建模
DOI：
10.4028/www.scientific.net/msf.858.741
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
P. Godignon
中科院分区：
文献类型：
--
作者：
B. Asllani;M. Berthou;D. Tournier;P. Brosselard;P. Godignon
本文研究了SBD和JBS二极管在80 ~ 500 K温度范围内的肖特基势垒演变。我们发现，肖特基接触的不均匀性有很强的影响势垒特性与温度的依赖关系，特别是低于200 K。在低温下，这种二极管的反向偏置电流的分析表明，势垒高度取决于温度，但也对电压。
This paper presents a study of the Schottky barrier evolution on SBD and JBS diodes over a wide range of temperatures from 80 to 500 K. We show that inhomogeneities of the Schottky contact have a strong impact on the dependence of barrier characteristics with temperature, especially below 200 K. Analysis of the reverse bias current of such diodes at low temperature show that the barrier height depends on temperature but also on voltage.