Room-temperature valleytronic transistor
Room-temperature valleytronic transistor
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室温 Valleytronic 晶体管
DOI：
10.1038/s41565-020-0727-0
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发表时间：
2020-07-20
影响因子：
38.3
通讯作者：
Wang, Xiaomu
中科院分区：
文献类型：
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作者：
Li, Lingfei;Shao, Lei;Wang, Xiaomu
Valleytronics 基于谷自由度而不是电荷，是超越互补金属氧化物半导体 (CMOS) 技术的下一代信息设备的有前途的候选者 (1-4)。尽管基于激子注入或低温横向电流方案的非局域响应已经探索了许多有趣的谷电子特性(4-7)，但与电子器件中的晶体管类似的谷电子构建块的演示，尤其是在室温下，仍然难以捉摸。在这里，我们报告了一种固态设备，可以在室温下实现生成、传播、检测和操纵谷信息的完整序列。手性纳米新月等离子体天线(8)用于通过线性偏振红外激发下的热电子注入在MoS(2)中选择性地产生谷偏振载流子。即使没有充电电流，这些长寿命的谷极化自由载流子也可以在谷霍尔配置(9-11)中被检测到，并且可以通过漂移传播超过18μm。此外，静电门控允许我们调制谷霍尔电压的大小。电谷霍尔输出可以驱动级联级的谷值操纵，使该器件能够充当具有纯谷电子输入/输出的无充电电流的晶体管。我们的研究结果证明了通过谷自由度编码和处理信息的可能性，并为研究量子材料中的贝里曲率偶极子提供了一种通用策略。具有手性纳米新月等离子体天线的MoS(2)晶体管能够在室温下生成、传播、检测和操纵谷信息。
Valleytronics, based on the valley degree of freedom rather than charge, is a promising candidate for next-generation information devices beyond complementary metal-oxide-semiconductor (CMOS) technology(1-4). Although many intriguing valleytronic properties have been explored based on excitonic injection or the non-local response of transverse current schemes at low temperature(4-7), demonstrations of valleytronic building blocks similar to transistors in electronics, especially at room temperature, remain elusive. Here, we report a solid-state device that enables a full sequence of generating, propagating, detecting and manipulating valley information at room temperature. Chiral nanocrescent plasmonic antennae(8)are used to selectively generate valley-polarized carriers in MoS(2)through hot-electron injection under linearly polarized infrared excitation. These long-lived valley-polarized free carriers can be detected in a valley Hall configuration(9-11)even without charge current, and can propagate over 18 mu m by means of drift. In addition, electrostatic gating allows us to modulate the magnitude of the valley Hall voltage. The electrical valley Hall output could drive the valley manipulation of a cascaded stage, rendering the device able to serve as a transistor free of charge current with pure valleytronic input/output. Our results demonstrate the possibility of encoding and processing information by valley degree of freedom, and provide a universal strategy to study the Berry curvature dipole in quantum materials.A MoS(2)transistor with chiral nanocrescent plasmonic antennae enables the generation, propagation, detection and manipulation of valley information at room temperature.