Optimum Cell Design for High-Performance A-Si:H Solar Cells Prepared by Photo-CVD
Optimum Cell Design for High-Performance A-Si:H Solar Cells Prepared by Photo-CVD
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光化学气相沉积制备高性能非晶硅:氢太阳能电池的优化电池设计
DOI：
10.1143/jjap.28.311
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发表时间：
1989
影响因子：
1.5
通讯作者：
Kiyoshi Takahashi
中科院分区：
文献类型：
--
作者：
Woo;A. Shibata;Yoshiyuki Kazama;M. Konagai;Kiyoshi Takahashi
优化了光-气相沉积法制备p-i-n型a-Si:H太阳能电池的工艺条件。选择雾度比为25%的金字塔形SnO2作为最佳TCO（透明导电氧化物）。对于3×3 mm2的电池，玻璃/TCO/p/buffer/i/n/Al结构的最佳效率为11.4% (Voc=0.90 V, Isc=17.86 mA/cm2， FF=0.706)；p-层、缓冲层、i-层和n-层的厚度分别为50 A、150 A、7800 A和600 A。
We have optimized the preparation conditions of p-i-n type a-Si:H solar cells prepared by photo-CVD. The pyramid-shaped SnO2 with haze ratio of 25% was chosen as the best TCO (transparent conductive oxide). The best efficiency obtained for a glass/TCO/p/buffer/i/n/Al structure of this type was 11.4% (Voc=0.90 V, Isc=17.86 mA/cm2, FF=0.706) for a 3×3 mm2 cell; the thicknesses of the p-, buffer-, i-, and n-layers were 50 A, 150 A, 7800 A, and 600 A, respectively.