Rectifying NdNiO3∕Nb:SrTiO3 junctions as a probe of the surface electronic structure of NdNiO3
Rectifying NdNiO3∕Nb:SrTiO3 junctions as a probe of the surface electronic structure of NdNiO3
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DOI：
10.1063/1.2193800
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发表时间：
2006-04
影响因子：
4
通讯作者：
Y. Kozuka;T. Susaki;H. Hwang
中科院分区：
文献类型：
--
作者：
Y. Kozuka;T. Susaki;H. Hwang
我们已经研究了Nb掺杂SrTiO 3衬底，n型半导体，和NdNiO 3薄膜，表现出强烈的一阶相变从高温顺磁金属到低温反铁磁绝缘体之间形成的结的电子性质。虽然结整流在所有温度下，电流-电压和电容特性显示没有迹象的金属-绝缘体转变清楚地观察到的薄膜。这表明NdNiO 3的表面电子结构不同于膜的内部，并且不经历体转变。
We have studied the electronic properties of junctions formed between Nb-doped SrTiO3 substrates, an n-type semiconductor, and NdNiO3 films, which exhibit a strong first-order phase transition from a high temperature paramagnetic metal to a low temperature antiferromagnetic insulator. Although the junctions are rectifying at all temperatures, the current-voltage and capacitance characteristics show no indication of the metal-insulator transition clearly observed in the films. This suggests that the surface electronic structure of NdNiO3 is distinct from the interior of the film and does not undergo the bulk transition.