The Limits of Post Oxidation Annealing in NO
The Limits of Post Oxidation Annealing in NO
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NO 中氧化后退火的局限性
DOI：
10.4028/www.scientific.net/msf.645-648.693
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
L. Feldman
中科院分区：
文献类型：
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作者：
J. Rozen;Xingguang Zhu;A. Ahyi;John R. Williams;L. Feldman
我们根据对 SiO2/SiC 界面处具有不同氮密度的电容器和晶体管的观察，报告了 NO 退火工艺的优点和缺点。虽然 NO 退火导致逐渐降低的界面态密度和更高的反转迁移率，与库仑限制输运一致，但 MOSFET 的性能仍然受到相对较差的界面质量的限制。此外，NO会在氧化物中诱发大量空穴陷阱。我们确定这些特性与氧化速率无关，并根据氮含量对其进行讨论。
We report on the benefits and the shortcomings of the NO annealing process following observations made on capacitors and transistors with various nitrogen densities at the SiO2/SiC interface. While NO annealing leads to a progressively lower interface state density and higher inversion mobility, consistent with Coulomb-limited transport, MOSFET properties are still limited by the relatively poor interface quality. Moreover, NO induces a large amount of hole traps in the oxide. We establish that these properties are not related to the oxidation rate and we discuss them in terms of the nitrogen content.