Dinaphthothiepine Bisimide and Its Sulfoxide: Soluble Precursors for Perylene Bisimide
Dinaphthothiepine Bisimide and Its Sulfoxide: Soluble Precursors for Perylene Bisimide
复制标题
DOI：
10.1021/jacs.0c04096
复制
发表时间：
2020-07-08
影响因子：
15
通讯作者：
Shinokubo, Hiroshi
中科院分区：
文献类型：
--
作者：
Hayakawa, Sakiho;Matsuo, Kyohei;Shinokubo, Hiroshi
报道了二萘并[1，8-bc：1 '，8'-ef]硫杂卓双酰亚胺（DNTBI）及其氧化物的合成和性质。它们的分子设计在概念上是基于将硫原子插入到二萘嵌苯双酰亚胺（PBI）核心中。这些硫插入的PBI衍生物采用非平面结构，这显著增加了它们在普通有机溶剂中的溶解度。在电子注入、光照射或加热时，DNTBI及其亚砜经历硫挤出反应以提供PBI。光诱导和热硫挤出反应几乎定量进行。这种独特的反应性使得能够制造高性能的溶液处理的n型有机场效应晶体管，其电子迁移率高达0.41 cm（2）V-1 s（-1）。
The synthesis and properties of dinaphtho[1,8-bc:1',8'-ef]thiepine bisimide (DNTBI) and its oxides are described. Their molecular design is conceptually based on the insertion of a sulfur atom into the perylene bisimide (PBI) core. These sulfur-inserted PBI derivatives adopt nonplanar structures, which significantly increases their solubility in common organic solvents. Upon electron injection, light irradiation, or heating, DNTBI and its sulfoxides undergo sulfur extrusion reactions to furnish PBI. The photoinduced and thermal sulfur extrusion reactions proceed almost quantitatively. This unique reactivity enabled the fabrication of a high-performance solution-processed n-type organic field-effect transistor with an electron mobility of up to 0.41 cm(2) V-1 s(-1).