Origin of enhanced electrical and conducting properties in pentacene films doped by molybdenum trioxide
Origin of enhanced electrical and conducting properties in pentacene films doped by molybdenum trioxide
复制标题
三氧化钼掺杂的并五苯薄膜增强电学和导电性能的起源
DOI：
10.1016/j.orgel.2013.07.017
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发表时间：
2013-10-01
影响因子：
3.2
通讯作者：
Liao, Liang-Sheng
中科院分区：
文献类型：
--
作者：
Lou, Yan-Hui;Xu, Mei-Feng;Liao, Liang-Sheng
三氧化钼(MoO_3)掺杂有机半导体在有机电子器件中显示出诱人的应用前景。研究了MoO_3掺杂并五苯薄膜光电特性增强的原因。通过对电流-电压特性的基本测量，研究了块体MoO_3掺杂并五苯薄膜的电荷输运、陷阱密度和电导等电学性质。通过X射线衍射和X射线光电子能谱测试，进一步研究了MoO_3掺杂并五苯薄膜的电学结构和导电机理。实验结果表明，MoO_3掺杂的并五苯薄膜的电导率的提高部分与低Mo氧化态(Mo4+)的比例增加有关，MoO_2的导电性能优于MoO_3。(C)2013爱思唯尔B.V.保留所有权利。
Molybdenum trioxide (MoO3) doped organic semiconductors have shown attractive applications in organic electric devices. The authors carried out an investigation on the origin of enhanced photoelectric characteristics in MoO3-doped pentacene films. Electrical properties including charge transport, trap density and conductivity in bulk MoO3-doped pentacene films were investigated through fundamental measurements of current-voltage characteristics. Electrical structure and conducting mechanism in MoO3-doped pentacene films were further evaluated by X-ray diffraction and X-ray photoelectron spectroscopy measurements. The experimental results suggest that the improved conductivity in MoO3-doped pentacene film was partly associated with the increased ratio of low Mo oxidation state (Mo4+) with a fact of better conducting property of MoO2 than that MoO3. (C) 2013 Elsevier B. V. All rights reserved.