Investigation on the formation mechanism of p-type Li–N dual-doped ZnO
Investigation on the formation mechanism of p-type Li–N dual-doped ZnO
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DOI：
10.1063/1.3518059
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发表时间：
2010-11
影响因子：
4
通讯作者：
Bi-xing Zhang;B. Yao;Yongfeng Li;Z. Zhang;Bo-Tao Li;C. Shan;D. Zhao;D. Shen
中科院分区：
文献类型：
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作者：
Bi-xing Zhang;B. Yao;Yongfeng Li;Z. Zhang;Bo-Tao Li;C. Shan;D. Zhao;D. Shen
采用等离子体辅助分子束外延技术在蓝宝石衬底上生长了Li浓度为0%~ 11.2%的Li、N双掺杂ZnO薄膜[ZnO：（Li，N）]，其中Li掺杂量为6.1%时，得到了稳定的p型ZnO：（Li，N）薄膜。ZnO：（Li，N）的p型导电性归因于Lii-NO络合物的形成，抑制了Lii施主对LiZn受主的补偿和（N2）O施主的生成。结果表明，Lii-NO复合物在价带顶附近形成杂质带，降低了受主的电离能，提高了ZnO：（Li，N）的导电性和稳定性.
Lithium and nitrogen dual-doped ZnO films [ZnO:(Li, N)] with Li concentrations of 0%–11.2% were grown on sapphire by plasma-assisted molecular beam epitaxy, and a stable p-type ZnO:(Li, N) film was obtained by doping 6.1% of Li. The p-type conductivity of ZnO:(Li, N) is attributed to the formation of the Lii–NO complex, which depresses the compensation of Lii donor for LiZn acceptor and the generation of (N2)O donors. It is demonstrated that the Lii–NO complex can form an impurity band above the valance band maximum, resulting in a decrease in the ionization energy of the acceptor and an improvement in the conductivity and stability of the p-type ZnO:(Li, N).