Characterization of the excess carrier lifetime of as-grown and electron irradiated epitaxial p-type 4H-SiC layers by the microwave photoconduc tivity decay method
Characterization of the excess carrier lifetime of as-grown and electron irradiated epitaxial p-type 4H-SiC layers by the microwave photoconduc tivity decay method
复制标题
通过微波光电导衰减法表征生长和电子辐照外延 p 型 4H-SiC 层的过剩载流子寿命
DOI：
--
复制
发表时间：
2009
期刊：
影响因子：
--
通讯作者：
Takeshi OHSHIMA
中科院分区：
文献类型：
--
作者：
Yoshinori MATSUSHITA;Masashi KATO;Masaya ICHIMURA;Tomoaki HATAYAMA;Takeshi OHSHIMA
