Heat Transport Analysis for Flash Lamp Annealing
Heat Transport Analysis for Flash Lamp Annealing
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闪光灯退火的热传输分析
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
M. Yoshioka
中科院分区：
文献类型：
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作者：
Hitoshi Habuka;A. Hara;T. Karasawa;M. Yoshioka
从理论上评估了闪光灯退火过程中硅片温度的变化。基于有限差分法开发了计算模型，考虑了各种热传输现象，例如从灯到硅表面的热辐射、硅表面的反射、来自热硅表面的热辐射、硅中的光吸收和热传导。在超浅结形成的位置，硅晶片中的光吸收对温度分布的影响可以忽略不计。显示最大的温度斜率是通过闪光灯退火形成的，因为考虑硅中的热吸收所获得的温度斜率与假设仅在表面处的热吸收而不考虑硅中的光吸收所获得的温度斜率一致。这项研究进一步得出结论，表面反射率强烈影响硅温度。
The silicon wafer temperature change during flash lamp annealing is theoretically evaluated. A calculation model is developed on the basis of a finite difference method taking into account various heat transport phenomena, such as heat radiation from a lamp to a silicon surface, reflection at the silicon surface, heat radiation from a hot silicon surface, light absorption in silicon, and thermal conduction. The effect of the light absorption in a silicon wafer on the temperature profile is negligible at the position of ultrashallow junction formation. The largest temperature slope is shown to be formed by flash lamp annealing because of the agreement of the temperature slope obtained by taking into account heat absorption in silicon with that obtained by assuming heat absorption only at the surface, without accounting for the light absorption in silicon. This study further concludes that the surface reflectivity strongly affects the silicon temperature.