Tunable Band Gaps and p-Type Transport Properties of Boron-Doped Graphenes by Controllable Ion Doping Using Reactive Microwave Plasma
Tunable Band Gaps and p-Type Transport Properties of Boron-Doped Graphenes by Controllable Ion Doping Using Reactive Microwave Plasma
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DOI：
10.1021/nn3005262
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发表时间：
2012-03-01
期刊：
影响因子：
17.1
通讯作者：
Lee, Chun-Sing
中科院分区：
文献类型：
--
作者：
Tang, Yong-Bing;Yin, Li-Chang;Lee, Chun-Sing
报道了在微波等离子体分解三甲基硼的离子气氛中，通过可控掺杂获得的掺硼石墨烯的带隙和输运性质。电子能量损失谱和X射线光电子能谱分析表明，石墨烯与离子气氛反应后，B原子被取代进入石墨烯中，没有B结构域的分离。通过控制离子反应时间，在0-13.85原子%的范围内调节B的含量，从而定量地评价了掺杂对输运性质的影响。石墨烯场效应管的电学测量表明，B掺杂的石墨烯具有明显的p型电导，电流通断比大于10(2)。特别是，随着B含量的增加，石墨烯的带隙从0调整到接近0.54 eV，导致了一系列的调制输运性质。我们相信，对具有可预测输运性质的石墨烯的可控掺杂可能为基于石墨烯的器件的发展铺平道路。
We report tunable band gaps and transport properties of B-doped graphenes that were achieved via controllable doping through reaction with the ion atmosphere of trimethylboron decomposed by microwave plasma. Both electron energy loss spectroscopy and X-ray photoemission spectroscopy analyses of the graphene reacted with ion atmosphere showed that B atoms are substitutionally incorporated into graphenes without segregation of B domains. The B content was adjusted over a range of 0-13.85 atom % by controlling the ion reaction time, from which the doping effects on transport properties were quantitatively evaluated. Electrical measurements from graphene field-effect transistors show that the B-doped graphenes have a distinct p-type conductivity with a current on/off ratio higher than 10(2). Especially, the band gap of graphenes is tuned from 0 to similar to 0.54 eV with Increasing B content, leading to a series of modulated transport properties. We believe the controllable doping for graphenes with predictable transport properties may pave a way for the development of graphene-based devices.