Electrically pumped ultraviolet ZnO diode lasers on Si
Electrically pumped ultraviolet ZnO diode lasers on Si
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DOI：
10.1063/1.3012579
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发表时间：
2008-11-03
影响因子：
4
通讯作者：
Liu, Jianlin
中科院分区：
文献类型：
--
作者：
Chu, Sheng;Olmedo, Mario;Liu, Jianlin
报道了电泵浦的氧化锌量子阱半导体激光器。采用分子束外延技术在硅衬底上生长了掺Sb的p型/Ga掺杂n型氧化锌，并在结中嵌入了一层镁锌锌/氧化锌/镁氧化锌量子阱。该二极管在室温下发射激光，阈值注入电流密度为10A/cm(2)。激光机制是激子相关的复合，反馈是由紧密堆积在硅上的纳米氧化锌颗粒的闭合散射提供的。
Electrically pumped ZnO quantum well diode lasers are reported. Sb-doped p-type ZnO/Ga-doped n-type ZnO with an MgZnO/ZnO/MgZnO quantum well embedded in the junction was grown on Si by molecular beam epitaxy. The diodes emit lasing at room temperature with a very low threshold injection current density of 10 A/cm(2). The lasing mechanism is exciton-related recombination and the feedback is provided by close-loop scattering from closely packed nanocolumnar ZnO grains formed on Si.