High efficiency thin film silicon solar cells prepared by zone‐melting recrystallization
High efficiency thin film silicon solar cells prepared by zone‐melting recrystallization
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区域熔融再结晶制备高效薄膜硅太阳能电池
DOI：
10.1063/1.110062
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发表时间：
1993
影响因子：
4
通讯作者：
S. Mitsui
中科院分区：
文献类型：
--
作者：
T. Ishihara;S. Arimoto;H. Morikawa;H. Kumabe;T. Murotani;S. Mitsui
一种新型的硅太阳能电池是使用化学气相沉积硅薄膜上的二氧化硅层。为了提高薄膜的晶体质量，应用区熔再结晶（ZMR）并用H+钝化多晶硅薄膜的晶界。结果表明，H+钝化对薄膜硅太阳电池是非常有效的，而ZMR条件下的（100）晶面取向是获得更高转换效率的关键。这种（100）性质也有利于使用各向异性化学蚀刻制作具有金字塔纹理化表面的有效光限制方案。实际尺寸为10×10 cm ~ 2时，转换效率高达14.2%。这是迄今为止大面积薄膜多晶硅太阳能电池的最高值。
A new type of silicon solar cell is demonstrated using chemical vapor deposited silicon thin films on a silicon dioxide layer. In order to improve the crystal quality of the thin films, zone‐melting recrystallization (ZMR) is applied and grain boundaries of polycrystalline Si films are passivated with H+. It is found that H+ passivation is quite effective for thin film Si solar cells and ZMR conditions to provide dominant (100) orientation is essential for achieving higher conversion efficiency. This (100) nature is also favorable for making effective light confinement scheme with pyramidal textured surface using anisotropic chemical etching. The conversion efficiency as high as 14.2% for a practical size of 10×10 cm2 is achieved. This is the highest for large area thin film polycrystalline Si solar cells so far.