Emerging memory devices
Emerging memory devices
复制标题
新兴存储设备
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
K. W. Kim
中科院分区：
文献类型：
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作者：
Kosmas Galatsis;Kang L. Wang;Youssry Y. Botros;Yang Yang;Yahong Xie;R. Kaner;Cengiz Ozkan;Jianlin Liu;M. Ozkan;Chongwu Zhou;K. W. Kim
每一种存储设备都有其独特的优势和挑战。DRAM和闪存具有截然不同的特性；因此，它们用于不同的应用。因此，寻找不同于cmos的存储器件有一个重要的警告：不同应用的不同存储空间。Fena的研究道路将继续专注于改进我们现有的存储器件，并与逻辑元件集成，同时探索基于纳米材料、纳米结构和下一代低成本组装技术的其他新兴存储器件
Each memory device presented has its unique range of advantages and challenges. DRAM and FLASH have radically different characteristics; hence, they are used for different applications. Accordingly, the search for memory devices beyond CMOS comes with an important caveat: different memory for different applications. FENA's research path will continue to focus on improving our presented memory devices, and integrating with logic elements, while exploring other emerging memory devices based on nanomaterials, nanostructures, and the next generation of low-cost assembly techniques