Guiding‐center‐drift resonance of two‐dimensional electrons in a grid‐gate superlattice potential
Guiding‐center‐drift resonance of two‐dimensional electrons in a grid‐gate superlattice potential
复制标题
栅栅超晶格势中二维电子的引导中心漂移共振
DOI：
10.1063/1.104730
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发表时间：
1991
影响因子：
4
通讯作者：
Henry I. Smith
中科院分区：
文献类型：
--
作者：
Chang Liu;D. Tsui;M. Shayegan;K. Ismail;D. Antoniadis;Henry I. Smith
我们研究了在存在二维横向表面超晶格（2D LSSL）电势的情况下 GaAs/ AlxGa1−xAs 中二维电子气的低场磁阻，并首次观察到先前报道的一维 LSSL 结构的引导中心漂移共振。 2D LSSL 电势是通过将电压 Vg 施加到在样品顶部制造的 200 nm 周期栅格结构而产生的，并且可以通过调节 Vg 从排斥性到吸引性连续调节。
We have studied the low‐field magnetoresistance of the two‐dimensional electron gas in GaAs/ AlxGa1−xAs in the presence of a two‐dimensional lateral surface superlattice (2D LSSL) potential, and observed, for the first time, the guiding‐center drift resonance, previously reported for one‐dimensional LSSL structures. The 2D LSSL potential is created by applying a voltage Vg to a 200 nm period grid‐gate structure fabricated on top of the sample and can be tuned continuously from being repulsive to attractive by tuning Vg.