High-Current and Short-Circuit Capability SOI-LIGBT With Double-Integrated Self-Adapted MOS-Resistors
High-Current and Short-Circuit Capability SOI-LIGBT With Double-Integrated Self-Adapted MOS-Resistors
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DOI：
10.1109/ted.2022.3232051
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发表时间：
2023-02
影响因子：
3.1
通讯作者：
Kemeng Yang;W. Su;Junnan Wang;Jie Wei;Yuxi Wei;T. Sun;Zhaoji Li;Bo Zhang;X. Luo
中科院分区：
文献类型：
--
作者：
Kemeng Yang;W. Su;Junnan Wang;Jie Wei;Yuxi Wei;T. Sun;Zhaoji Li;Bo Zhang;X. Luo
A 300-V-rated high-performance SOI-LIGBT with double-integrated MOS resistors (MR LIGBT) is proposed and its mechanism is investigated. It features double-integrated self-adapted MOS resistors ${R}_{\text {M1}}$ and ${R}_{\text {M2}}$ . ${R}_{\text {M1}}$ and ${R}_{\text {M2}}$ influence states of the parasitic diode ${D}_{{0}}$ in the conventional LIGBT region and parasitic diode ${D}_{{1}}$ in ${R}_{\text {M1}}$ by modulating the potential of ${P}^{+}{(}{V}_{\text {P}}{)}$ and ${N}^{+}{(}{V}_{\text {N}}{)}$ near the trench gate. In the ON-state, the adaptive turn-on ${D}_{{0}}$ caused by the large ${R}_{\text {M1}}$ enhances the conductivity modulation. When ${D}_{{1}}$ is triggered at a high anode voltage, ${V}_{\text {N}}$ is clamped and the device turns into saturation. The turn-on ${D}_{{0}}$ increases the saturation current density of the MR LIGBT to $2.5\times $ of self-adjust conductivity modulation trench (SCMT) LIGBT and reduces the ON-state voltage drop ( ${V}_{\text {on}}$ ) by 49% and 36% compared with conventional (Con.) LIGBT and SCMT LIGBT, respectively. ${D}_{{0}}$ adaptively turns off during short-circuit and turn-off periods. Consequently, compared with the Con. and SCMT LIGBTs, the MR LIGBT not only lengthens the short-circuit time ( ${t}_{\text {SC}}$ ) to $24.7~\mu \text{s}$ from 7.12 to $19.8~\mu \text{s}$ , but also decreases ${E}_{\text {off}}$ by 74% and 54% at the same ${V}_{\text {on}}$ . Owing to the prominent static and dynamitic characteristics, the total power loss of the MR LIGBT is reduced by 28% and 40% at ${f} =50$ kHz compared with that of SCMT and Con. LIGBTs.
A 300-V-rated high-performance SOI-LIGBT with double-integrated MOS resistors (MR LIGBT) is proposed and its mechanism is investigated. It features double-integrated self-adapted MOS resistors ${R}_{\text {M1}}$ and ${R}_{\text {M2}}$ . ${R}_{\text {M1}}$ and ${R}_{\text {M2}}$ influence states of the parasitic diode ${D}_{{0}}$ in the conventional LIGBT region and parasitic diode ${D}_{{1}}$ in ${R}_{\text {M1}}$ by modulating the potential of ${P}^{+}{(}{V}_{\text {P}}{)}$ and ${N}^{+}{(}{V}_{\text {N}}{)}$ near the trench gate. In the ON-state, the adaptive turn-on ${D}_{{0}}$ caused by the large ${R}_{\text {M1}}$ enhances the conductivity modulation. When ${D}_{{1}}$ is triggered at a high anode voltage, ${V}_{\text {N}}$ is clamped and the device turns into saturation. The turn-on ${D}_{{0}}$ increases the saturation current density of the MR LIGBT to $2.5\times $ of self-adjust conductivity modulation trench (SCMT) LIGBT and reduces the ON-state voltage drop ( ${V}_{\text {on}}$ ) by 49% and 36% compared with conventional (Con.) LIGBT and SCMT LIGBT, respectively. ${D}_{{0}}$ adaptively turns off during short-circuit and turn-off periods. Consequently, compared with the Con. and SCMT LIGBTs, the MR LIGBT not only lengthens the short-circuit time ( ${t}_{\text {SC}}$ ) to $24.7~\mu \text{s}$ from 7.12 to $19.8~\mu \text{s}$ , but also decreases ${E}_{\text {off}}$ by 74% and 54% at the same ${V}_{\text {on}}$ . Owing to the prominent static and dynamitic characteristics, the total power loss of the MR LIGBT is reduced by 28% and 40% at ${f} =50$ kHz compared with that of SCMT and Con. LIGBTs.