Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
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氢等离子体后处理提高ZnO薄膜的导电率和透光率
DOI：
10.1063/1.3108543
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发表时间：
2009-04-15
影响因子：
3.2
通讯作者：
Chen, N. F.
中科院分区：
文献类型：
--
作者：
Cai, P. F.;You, J. B.;Chen, N. F.
研究了氢等离子体处理对射频磁控溅射法制备的ZnO薄膜电学和光学性能的影响。结果表明，ZnO H薄膜在可见光范围内的平均透过率为92%，具有很高的透明性。经氢等离子体处理后，ZnO H薄膜的载流子浓度和迁移率均有所提高，电阻率达到10（-3）cm量级。我们认为，掺入的氢不仅钝化大多数的缺陷和/或受体存在，但也引入浅施主态，如V-O-H络合物和间隙氢H-1。此外，退火数据表明，H-i在ZnO中是不稳定的，而V-O-H络合物在400 ℃下总体上保持稳定，并且当退火温度增加到500 ℃时，后者扩散出来。这些结果使得ZnO H作为透明导电电极在未来的应用中更具吸引力。
We studied the effects of hydrogen plasma treatment on the electrical and optical properties of ZnO films deposited by radio frequency magnetron sputtering. It is found that the ZnO H film is highly transparent with the average transmittance of 92% in the visible range. Both carrier concentration and mobility are increased after hydrogen plasma treatment, correspondingly, the resistivity of the ZnO H films achieves the order of 10(-3) cm. We suggest that the incorporated hydrogen not only passivates most of the defects and/or acceptors present, but also introduces shallow donor states such as the V-O-H complex and the interstitial hydrogen H-i. Moreover, the annealing data indicate that H-i is unstable in ZnO, while the V-O-H complex remains stable on the whole at 400 degrees C, and the latter diffuses out when the annealing temperature increases to 500 degrees C. These results make ZnO H more attractive for future applications as transparent conducting electrodes.