Study of the effect of 2D metallic photonic crystals on GaSb TPV diode performance
Study of the effect of 2D metallic photonic crystals on GaSb TPV diode performance
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DOI：
10.1117/12.2290975
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发表时间：
2018-02
期刊：
影响因子：
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通讯作者：
Dante F. DeMeo;C. Shemelya;A. Licht;Emily S. Carlson;N. Pfiester;Lisa Fantini;T. Vandervelde
中科院分区：
文献类型：
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作者：
Dante F. DeMeo;C. Shemelya;A. Licht;Emily S. Carlson;N. Pfiester;Lisa Fantini;T. Vandervelde
热光电转换（TPV）是用于废热回收应用的潜在技术，并且利用IR敏感的光伏二极管将长波长光子（> 800 nm）转换成电能。最常见的转换区利用锑化镓（GaSb）作为TPV二极管的标准半导体系统，因为其对于红外辐射（~ 1700 nm）的高内部量子效率（接近90%）。然而，寄生损耗阻碍了最终器件实现高转换效率。提高这些器件的转换效率的一个可能途径是将金属光子晶体（MPhC）结合到二极管的前表面上。在这项工作中，我们研究了MPhCs对GaSb TPV二极管的影响。给出了表征与GaSb一起使用的特定MPhC设计的模拟。研究了电场强度随波长和深度的变化关系，以及光子晶体厚度对电场与半导体相互作用时间的影响。结果表明，MPhC的厚度对增强带的宽度影响不大，理想的p-i-n结深度在0.6 ~ 2.1μm之间。此外，模拟结果表明，对于350 nm和450 nm的MPhC厚度，电场/半导体相互作用时间分别增加约40%和46%。
Thermophotovoltaics (TPVs) are a potential technology for waste-heat recovery applications and utilize IR sensitive photovoltaic diodes to convert long wavelength photons (>800nm) into electrical energy. The most common conversion regions utilize Gallium Antimonide (GaSb) as the standard semiconductor system for TPV diodes due to its high internal quantum efficiencies (close to 90%) for infrared radiation (~1700nm). However, parasitic losses prevent high conversion efficiencies from being achieved in the final device. One possible avenue to improve the conversion efficiency of these devices is to incorporate metallic photonic crystals (MPhCs) onto the front surface of the diode. In this work, we study the effect of MPhCs on GaSb TPV diodes. Simulations are presented which characterize a specific MPhC design for use with GaSb. E-field intensity vs. wavelength and depth are investigated as well as the effect of the thickness of the PhC on the interaction time between the e-field and semiconductor. It is shown that the thickness of MPhC has little effect on width of the enhancement band, and the depth the ideal p-i-n junction is between 0.6μm and 2.1μm. Additionally, simulated results demonstrate an increase of E-field/semiconductor interaction time of approximately 40% and 46% for a MPhC thickness of 350nm and 450nm respectively.