X-ray CTR scattering measurement of InP/InGaAs/InP interface structures fabricated by different growth processes
X-ray CTR scattering measurement of InP/InGaAs/InP interface structures fabricated by different growth processes
复制标题
不同生长工艺制造的 InP/InGaAs/InP 界面结构的 X 射线 CTR 散射测量
DOI：
10.1016/s0169-4332(00)00041-6
复制
发表时间：
2000
影响因子：
6.7
通讯作者：
Y. Takeda
中科院分区：
文献类型：
--
作者：
M. Tabuchi;R. Takahashi;M. Araki;K. Hirayama;N. Futakuchi;Y. Shimogaki;Y. Nakano;Y. Takeda
用X射线晶体截断棒（CTR）测量方法研究了有机金属气相外延（OMVPE）生长的InP/InGaAs（三单层（ML））/InP异质界面。用三种不同的源气体流动序列制备样品：（a）常规序列，（B）生长中断，和（c）Ga和In源气体脉冲注入。X射线CTR测量的结果表明，（B）和（c）的InP盖层和InGaAs层之间的界面比（a）的界面更尖锐。然而，在（B）中As的量小于设计的量，因为在生长中断期间As原子甚至从InGaAs层脱附。令人惊讶的是，Ga原子分布更宽，Ga的峰组成小于为所有样品设计的那些。这意味着量子阱结构与设计和预期的有很大的差距。这表明，在解决了V族原子分布问题后，还需要进一步努力控制III族原子的分布。
Hetero-interfaces of InP/InGaAs (three monolayers (ML))/InP samples grown by organometallic vapor phase epitaxy (OMVPE) were investigated using X-ray crystal truncation rod (CTR) measurement. The samples were prepared with three different source-gas flow-sequences: (a) conventional sequence, (b) growth interruption, and (c) Ga and In source-gas pulse injection. The results of the X-ray CTR measurement showed that the interfaces between InP cap and InGaAs layers of (b) and (c) were sharper than that of (a) as intended. However, the amount of As in (b) was less than that designed since As atoms desorbed even from the InGaAs layer during the growth interruption. Surprisingly, the Ga atoms distributed wider and peak compositions of Ga were smaller than those designed for all the samples. It means that the quantum well structures are far from those designed and expected. It suggests that more efforts are necessary to control the distribution of group-III atoms after we solved the problem of group-V atom distributions.