The effect of underlayer for Ba-ferrite sputtered films on c-axis orientation
The effect of underlayer for Ba-ferrite sputtered films on c-axis orientation
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Ba铁氧体溅射薄膜底层对c轴取向的影响
DOI：
10.1063/1.364828
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发表时间：
1997
影响因子：
3.2
通讯作者：
M. Naoe
中科院分区：
文献类型：
--
作者：
A. Morisako;Xiaoxi Liu;M. Matsumoto;M. Naoe
使用面向靶溅射系统沉积一层薄的非晶 Ba-Fe-O 薄膜作为 c 轴取向六方钡铁氧体 (BaM) 薄膜生长的底层。该底层有利于结晶并提高六方M相的结晶度。具有c轴取向的BaM薄膜可以在525°C的Ts下在底层上制备。在该非晶底层上制备的BaM薄膜表现出良好的c轴取向，c轴色散角Δθ50小至3°。 X 射线光电子能谱图表明，该底层可防止 Ba 和 Fe 深度扩散到基底表面。
A thin amorphous Ba–Fe–O film was deposited as an underlayer for the growth of c-axis oriented hexagonal barium ferrite (BaM) films using a facing targets sputtering system. This underlayer facilitates the crystallization and improves the crystallinity for hexagonal M phase. BaM films with c-axis orientation can be prepared at Ts of 525 °C on the underlayer. BaM films prepared on this amorphous underlayer exhibit a good c-axis orientation with c-axis dispersion angle Δθ50 as small as 3°. It is shown by the x-ray photoemission spectroscopy profile that this underlayer prevents deep diffusion of Ba and Fe into the substrate surface.