Evolution of locally excited avalanches in semiconductors
Evolution of locally excited avalanches in semiconductors
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DOI：
10.1063/1.3425737
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发表时间：
2010-05-10
影响因子：
4
通讯作者：
Shields, A. J.
中科院分区：
文献类型：
--
作者：
Yuan, Z. L.;Dynes, J. F.;Shields, A. J.
我们发现半导体雪崩光电二极管在雪崩的早期演化过程中会表现出很小的放大噪声。噪音如此之低，以至于为每一次雪崩埋下种子的局部激发电荷的数量都可以解决。这些发现构成了实现用于量子信息处理的固态无噪声放大器的重要一步。此外，我们相信，所使用的实验装置，即时间分辨局部激发雪崩，将成为优化数值分辨率的有用工具。(C)2010年美国物理研究所。[DOI：10.1063/1.3425737]
We show that semiconductor avalanche photodiodes can exhibit diminutive amplification noise during the early evolution of avalanches. The noise is so low that the number of locally excited charges that seed each avalanche can be resolved. These findings constitute an important step towards realization of a solid-state noiseless amplifier for quantum information processing. Moreover, we believe that the experimental setup used, i.e., time-resolving locally excited avalanches, will become a useful tool for optimizing the number resolution. (C) 2010 American Institute of Physics. [doi:10.1063/1.3425737]