High energy proton irradiation effects on SiC Schottky rectifiers
High energy proton irradiation effects on SiC Schottky rectifiers
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DOI：
10.1063/1.1509468
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发表时间：
2002-09
影响因子：
4
通讯作者：
S. Nigam;J. Kim;F. Ren;G. Chung;M. F. Macmillan;R. Dwivedi;T. Fogarty;R. Wilkins;K. Allums
中科院分区：
文献类型：
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作者：
S. Nigam;J. Kim;F. Ren;G. Chung;M. F. Macmillan;R. Dwivedi;T. Fogarty;R. Wilkins;K. Allums
4 H-SiC肖特基整流器与介电重叠边缘终端暴露于40 MeV的质子在通量从5×107-5×109 cm−2。反向击穿电压从未辐照器件的10500 V降低到最高质子剂量后的1050 V。在这些条件下，−250 V时的反向漏电流大约加倍。−2 V时的正向电流下降了1.1%（注量为5×107 cm−2）至1.42%（注量为5×109 cm−2），而由于引入了缺陷中心，低偏压时的电流增加了。理想因子、导通电阻和正向导通电压在105 ×108 cm−2的注量下显示出适度的增加，但在最高剂量下受到更强烈的影响（增加40%-75%）。
4H-SiC Schottky rectifiers with dielectric overlap edge termination were exposed to 40 MeV protons at fluences from 5×107–5×109 cm−2. The reverse breakdown voltage decreased from ∼500 V in unirradiated devices to ∼−450 V after the highest proton dose. The reverse leakage current at −250 V was approximately doubled under these conditions. The forward current at −2 V decreased by ∼1% (fluence of 5×107 cm−2) to ∼42% (fluence of 5×109 cm−2), while the current at lower biases was increased due to the introduction of defect centers. The ideality factor, on-state resistance, and forward turn-on voltage showed modest increases for fluences of ⩽5×108 cm−2, but were more strongly affected (increase of 40%–75%) at the highest dose employed.