Effects of temperature, nitrogen ions, and antimony on wide depletion width GaInNAs
Effects of temperature, nitrogen ions, and antimony on wide depletion width GaInNAs
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温度、氮离子和锑对宽耗尽宽度 GaInNA 的影响
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
S. Kurtz
中科院分区：
文献类型：
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作者：
A. Ptak;D. Friedman;S. Kurtz
GaInNAs是提高三结太阳能电池转换效率的有前途的候选材料，但稀氮化物遭受低至不存在的少数载流子扩散长度。使用分子束外延生长的具有宽耗尽宽度的p-i-n结构可以在稀氮化物中实现高光电流，但这需要i层中的背景掺杂低于2× 1014 cm-3。在这里，作者报告了一些因素，增加净背景受体浓度，阻碍了实现宽耗尽宽度的效果，包括高衬底温度，离子从射频等离子体源用于提供活性氮，和Sb的添加。此外，低衬底温度导致n型导电性的增加。太阳能电池的结果表明，锑对GaInNAs器件的有害影响，包括降低开路电压和填充因子。
GaInNAs is a promising candidate material to increase the conversion efficiency of triple junction solar cells, but the dilute nitrides suffer from low-to-nonexistent minority-carrier diffusion lengths. The use of molecular beam epitaxy grown p-i-n structures with wide depletion widths can achieve high photocurrents in dilute nitrides, but this requires background doping below 2×1014cm−3 in the i layer. Here, the authors report on a number of factors that increase the net background acceptor concentration, hindering the effects to realize wide depletion widths, including high substrate temperatures, ions from the rf plasma source used to provide active nitrogen, and the addition of Sb. In addition, low substrate temperatures lead to an increase in n-type conductivity. Solar cell results that show the deleterious effects of Sb on GaInNAs devices are presented, including decreased open-circuit voltage and fill factor.