Charge‐carrier kinetics in semiconductors by microwave conductivity measurements
Charge‐carrier kinetics in semiconductors by microwave conductivity measurements
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通过微波电导率测量半导体中的载流子动力学
DOI：
10.1063/1.360206
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发表时间：
1995
影响因子：
3.2
通讯作者：
M. Kunst
中科院分区：
文献类型：
--
作者：
C. Swiatkowski;A. Sanders;K. Buhre;M. Kunst
介绍了微波频率范围内电导率和瞬态光电导的理论和测量结果。该理论在具有已知特性的半导体的非侵入性测量上进行了测试，即，硅晶片，在一个简单的设备。定量的理论和实验之间的协议，发现没有使用可调参数。本文提出了一种在有限的电导率范围内非接触精确测定硅片电导率的方法。光电导测量的定量评价使得详细讨论非均匀光电导成为可能。讨论了非均匀载流子动力学可靠测量的要求。
Theory and measurements of the conductivity and the (transient) photoconductivity in the microwave frequency range are presented. The theory is tested on noninvasive measurements of semiconductors with known properties, i.e., Si wafers, in a simple apparatus. Quantitative agreement between theory and experiment is found without the use of adjustable parameters. A contactless and accurate determination of the conductivity of Si wafers in a restricted conductivity range is proposed. The quantitative evaluation of photoconductivity measurements makes a detailed discussion of nonuniform photoconductivity possible. The requirements for reliable measurements of nonhomogeneous charge carrier kinetics are discussed.