A Single-Channel 18.5 GS/s 5-bit Flash ADC using a Body-Biased Comparator Architecture in 22nm FD-SOI
A Single-Channel 18.5 GS/s 5-bit Flash ADC using a Body-Biased Comparator Architecture in 22nm FD-SOI
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采用 22nm FD-SOI 封装的体偏置比较器架构的单通道 18.5 GS/s 5 位闪存 ADC
DOI:
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发表时间:
2019
期刊:
影响因子:
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通讯作者:
F. Gerfers
中科院分区:
文献类型:
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作者:
Nima Lotfi;Pedro Lehmann Ibáñez;Marcel Runge;F. Gerfers
This paper presents a flash ADC architecture employing a comparator well-body biasing technique to eliminate the classical differential-difference amplifier (DDA) as well as the power-hungry reference ladder to enable significant power savings. DDAs require two differential pairs, one for the actual input signal and the other for the reference voltage whereas the proposed comparator technique merely uses a single differential pair for the input signal reducing the power consumption of the power-hungry preamplifier by approx. 50%. Furthermore, the flash ADC reference levels of the presented flash ADC, are generated by altering the input transistor threshold voltages. The adopted 22nm FD-SOI technology provides a threshold voltage tuning gain of approx. 85mV/V. Using a 3V capacitive charge-pump, a nominal full-scale range of 500 mVppd is achieved. This way, the proposed method also eliminates comparator kickback and therewith the low impedance requirement to guarantee settling of the reference ladder. The adopted technology provides a strong isolation from the gate to the back-gate of the input devices. The proposed techniques are adopted in a 5-bit 18.5 GS/s flash ADC. The track-and-hold along with the isolating front-end input buffer provides 28 GHz input bandwidth. The front-end buffer and SC charge pump operate from a 1.5V power supply while all other building blocks (comparator and clock tree) operate from a 0.9V power supply. The total power consumption is 140mW including clock buffers. The ADC achieves a SNDR and SFDR of 31dB and 43 dBc and 28.5dB and 40 dBc respectively at low and Nyquist input frequencies